Abstract: Based on DPL model, the thermoelastic behavior of a semiconductor material subjected to an initial stress, with temperature dependent properties, is proposed. The normal mode analysis method resorted to for a solution. Numerically simulated results are obtained, and presented graphically for silicon, to depict the effect of initial stress and temperature dependent property parameters on the different physical quantities.
SPRINGER HEIDELBERG
Engineering; Science & Technology - Other Topics; Materials Science; Physics